Politico-Engineering−Politically-Initiated Engineering in Piezoelectric Devices
نویسندگان
چکیده
منابع مشابه
Piezoelectric fields in nitride devices
We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojuncti...
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© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved. 1 Media Lab, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. 2 David H. Koch Institute for Integrative Cancer Research, Massachusetts Institute of Technology, Cambridge, MA 02142, USA. 3 Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA. 4 Institu...
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ژورنال
عنوان ژورنال: SOJ Materials Science & Engineering
سال: 2013
ISSN: 2372-0964
DOI: 10.15226/sojmse.2013.00104